9 Institutskii per.,
Dolgoprudny, Moscow region

Archive of publications


  • Romanov, R.I., Kozodaev, M.G., Chernikova, A.G., Zabrosaev, I.V., Chouprik, A.A., Zarubin, S.S., Novikov, S.M., Volkov, V.S., Markeev, A.M.Thickness-Dependent Structural and Electrical Properties of WS2 Nanosheets Obtained via the ALD-Grown WO3 Sulfurization Technique as a Channel Material for Field-Effect Transistors (2021) ACS Omega, 6 (50), pp. 34429-34437.
  • Koroleva, A.A., Kozodaev, M.G., Lebedinskii, Y.Y., Markeev, A.M. Interface engineering for enhancement of the analog properties of W/WO3−x/HfO2/Pd resistance switched structures (2021) Journal of Physics D: Applied Physics, 54 (50), статья № 504004.

  • Khakimov, R.R., Chernikova, A.G., Lebedinskii, Y., Koroleva, A.A., Markeev, A.M. Influence of the Annealing Temperature and Applied Electric Field on the Reliability of TiN/Hf0.5Zr0.5O2/TiN Capacitors (2021) ACS Applied Electronic Materials, 3 (10), pp. 4317-4327.

  • Kozodaev, M.G., Romanov, R.I., Chernikova, A.G., Markeev, A.M. Atomic Layer Deposition of Ultrathin Tungsten Oxide Films from WH2(Cp)2and Ozone (2021) Journal of Physical Chemistry C, 125 (39), pp. 21663-21669.

  • Chernikova, A.G., Markeev, A.M. Dynamic imprint recovery as an origin of the pulse width dependence of retention in Hf0.5Zr0.5O2-based capacitors (2021) Applied Physics Letters, 119 (3), статья № 032904

  • Romanov, R.I., Kozodaev, M.G., Lebedinskii, Y.Y., Zabrosaev, I.V., Guberna, E.A., Markeev, A.M. Band Alignment of Graphene/MoS2/Fluorine Tin Oxide Heterojunction for Photodetector Application (2021) Physica Status Solidi (A) Applications and Materials Science, 218 (6), статья № 2000744

  • Gismatulin, A., Gritsenko, V., Perevalov, T., Kuzmichev, D., Chernikova, A., Markeev, A. Charge Transport Mechanism in Atomic Layer Deposited Oxygen-Deficient TaOx Films (2021) Physica Status Solidi (B) Basic Research, 258 (3), статья № 2000432,


  • Chouprik, A., Kondratyuk, E., Mikheev, V., Matveyev, Y., Spiridonov, M., Chernikova, A., Kozodaev, M.G., Markeev, A.M., Zenkevich, A., Negrov, D. "Origin of the retention loss in ferroelectric Hf0.5Zr0.5O2-based memory devices" (2021) Acta Materialia, 204, № 116515

  • Kozodaev, M.G., Slavich, A.S., Romanov, R.I., Zarubin, S.S., Markeev, A.M.  "Influence of Reducing Agent on Properties of Thin WS2Nanosheets Prepared by Sulfurization of

    Atomic Layer-Deposited WO3" (2021) Journal of Physical Chemistry C,

  • Koroleva, A.A., Chernikova, A.G., Chouprik, A.A., Gornev, E.S., Slavich, A.S., Khakimov, R.R., Korostylev, E.V., Hwang, C.S., Markeev, A.M. Impact of the Atomic Layer-Deposited Ru Electrode Surface Morphology on Resistive Switching Properties of TaOx-Based Memory Structures (2020) ACS Applied Materials and Interfaces, 12 (49), pp. 55331-55341.

  • Chernikova, A.G., Kozodaev, M.G., Khakimov, R.R., Polyakov, S.N., Markeev, A.M. Influence of ALD Ru bottom electrode on ferroelectric properties of Hf0.5Zr0.5O2-based capacitors (2020) Applied Physics Letters, 117 (19), статья № 192902

  • Kuzmichev, D.S., Chernikova, A.G., Kozodaev, M.G., Markeev, A.M. Resistance Switching Peculiarities in Nonfilamentary Self-Rectified TiN/Ta2O5/Ta and TiN/HfO2/Ta2O5/Ta Stacks (2020) Physica Status Solidi (A) Applications and Materials Science, 217 (18), статья № 1900952,

  • Romanov, R.I., Kozodaev, M.G., Lebedinskii, Y.Y., Perevalov, T.V., Slavich, A.S., Hwang, C.S., Markeev, A.M. Radical-Enhanced Atomic Layer Deposition of a Tungsten Oxide Film with the Tunable Oxygen Vacancy Concentration (2020) Journal of Physical Chemistry C, 124 (33), pp. 18156-18164

  • Romanov, R.I., Slavich, A.S., Kozodaev, M.G., Myakota, D.I., Lebedinskii, Y.Y., Novikov, S.M., Markeev, A.M. Band Alignment in As-Transferred and Annealed Graphene/MoS2 Heterostructures (2020) Physica Status Solidi - Rapid Research Letters, 14 (2),  № 1900406

  • Gismatulin, A., Gritsenko, V., Perevalov, T., Kuzmichev, D., Chernikova, A., Markeev, A. Charge Transport Mechanism in Atomic Layer Deposited Oxygen-Deficient TaOx Films (2020) Physica Status Solidi (B) Basic Research,





  1. Chernikova A.,  Kozodaev M.,  Markeev A., Negrov D., Spiridonov M.,  Zarubin S, Bak O., Buragohain P., Lu H., Suvorova E.,  Gruverman A. ,  Zenkevich A. "Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si" ACS Applied Materials and Interfaces Volume 8, Issue 11, 30 March 2016, Pages 7232-7237

  2. Chernikova A.G., Kuzmichev D.S., Negrov D.V., Kozodaev M.G., Polyakov S.N., Markeev A.M. "Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks" Applied Physics Letters Volume 108, Issue 24, 13 June 2016

  3. Orlov O.M.,Markeev A.M.,  Zenkevich A.V.,  Chernikova A.G.,  Spiridonov M.V.,  Izmaylov R.A., Gornev E.S. "Investigation of the properties and manufacturing features of nonvolatile FRAM memory based on atomic layer deposition" Russian Microelectronics Volume 45, Issue 4, 1 July 2016, Pages 262-269

  4. Sergei Zarubin, Elena Suvorova, Maksim Spiridonov, Dmitrii Negrov, Anna Chernikova, Andrey Markeev, and Andrei Zenkevich. "Fully ALD-grown TiN/Hf0.5Zr0.5O2/TiN stacks: Ferroelectric and structural properties" Applied Physics Letters Volume 109, Issue 19, 8 November 2016


  1. Chernikova A.G., Markeev A.M., Lebedinskii Y.Y., Kozodaev M.G., Zablotskiy A.V. "Structural, chemical and electrical properties of ALD-grown HfxAl1-xOy thin films for MIM capacitors" Physica Status Solidi (B) Basic Research Volume 252, Issue 4, 1 April 2015, Pages 701-708

  2. Egorov, K.V., Lebedinskii, Y.Y., Markeev, A.M., Orlov, O.M. "Full ALD Ta2O5-based stacks for resistive random access memory grown with in vacuo XPS monitoring" Applied Surface Science Volume 356, 30 November 2015, Pages 454-459

  3. Lebedinskii Y.Y, Chernikova A.G, Markeev A.M., Kuzmichev D.S. "Effect of dielectric stoichiometry and interface chemical state on band alignment between tantalum oxide and platinum" Applied Physics Letters Volume 107, Issue 14, 5 October 2015, Article number 142904

  4. Matveyev Y., Egorov K., Markeev A., Zenkevich A. "Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO2/TiN devices" Journal of Applied Physics Volume 117, Issue 4, 28 January 2015, Article number 044901

  5. Egorov, K.V. , Kirtaev, R.V.,  Lebedinskii, Y.Y.,  Markeev, A.M.,  Matveyev, Y.A., Orlov, O.M.,  Zablotskiy, A.V.,  Zenkevich, A.V.  "Complementary and bipolar regimes of resistive switching in TiN/HfO2/TiN stacks grown by atomic-layer deposition" Physica Status Solidi (A) Applications and Materials Science Volume 212, Issue 4, 1 April 2015, Pages 809-816

  6. Chernikova A.,  Kozodaev M.,  Markeev A.,  Matveev Y.,  Negrov D.,  Orlov O.,  "Confinement-free annealing induced ferroelectricity in Hf0.5Zr0.5O2 thin films" Microelectronic Engineering Volume 147, 1 November 2015, Pages 15-18

  7. Islamov D.R., Chernikova A.G.,  Kozodaev M.G.,  Markeev A.M.,  Perevalov T.V.,  Gritsenko V.A.,  Orlov O.M., "Charge transport mechanism in thin films of amorphous and ferroelectric Hf0.5Zr0.5O2" JETP Letters Volume 102, Issue 8, 1 October 2015, Pages 544-547


  1. Matveyev Yu.A., Markeev A.M., Lebedinskii Yu.Yu., Chouprik A.A., Egorov K.V., Drube W., Zenkevich A.V., "Resistive switching effect in HfxAl1-xOy with a graded Al depth profile studied by hard X-ray photoelectron spectroscopy" Thin Solid Films Volume 563, 31 July 2014, Pages 20-23


  1. A.Markeev, A.Chouprik, K.Egorov, Yu.Lebedinskii, A.Zenkevich and O.Orlov. "Multilevel resistive switching in ternary HfxAl1-xOy oxide with graded Al depth profile". Microelectronic Engineering, 2013.

  2. Andrey M.Markeev, Anna G.Chernikova, Anastasya A.Chouprik, Sergey A.Zaitsev, Dmitry V.Ovchinnikov, Holger Althues, and Susanne Dorfler. "Atomic layer deposition of Al2O3 and AlxTi1-xOy thin films on N2O plasma pretreated carbon materials". J. Vac. Sci. Technol. A 31, 01A135 (2013).



  1. Alekhin A.P., Chouprik A.A., Grigal I.P., Gudkova S.A., Lebedinskii Yu.Yu., Markeev A.M., Zaitsev S.A. "Electrical properties of quaternary HfAlTiO thin films grown by atomic layer deposition". Thin Solid Films 520 (14), 2012, pp.4547-4550.

  2. Grigal I.P., Markeev A.M., Gudkova S.A., Chernikova A.G., Mityaev A.S., Alekhin A.P. "Correlation between bioactivity and structural properties of titanium dioxide coatings grown by atomic layer deposition". Applied Surface Science 258 (8), 2012, pp.3415-3419.



  1. Grigal I.P., Alekhin A.P., Markeev A.M., Gudkova S.A., Chernikova A.G., TetyukhinD.V., Kozlov E.N. "Atomic layer deposition of bioactive TiO2 coatings for titanium implants".European Cells and Materials 22 (SUPPL.1), 2011, pp.27.



  1. Alekhin A.P., Lapushkin G.I., Markeev A.M., Sigarev A.A., Toknova V.F. "Atomic layer deposition of the titanium dioxide thin film from tetraethoxytitanium and water".Journal of Surface Investigation 4 (3), 2010, pp.379-383.

  2. Alekhin A.P., Gudkova S.A., Markeev A.M., Mitiaev A.S., Sigarev A.A., Toknova V.F. "Structural properties of the titanium dioxide thin films grown by atomic layer deposition at various numbers of reaction cycles". Applied Surface Science 257 (1), 2010, pp.186-191.

  3. Alekhin A.P., Boleiko G.M., Gudkova S.A., Markeev A.M., Sigarev A.A., Toknova V.F., Kirilenko A.G., Lapshin R.V., Kozlov E.N., Tetyukhin D.V. "Synthesis of biocompatible surfaces by nanotechnology methods". Nanotechnologies in Russia ,Volume 5, Issue 9-10, 2010, pages 696-708.

  4. Alekhin A.P., Gudkova S.A., MarkeevA.M., Mitiaev A.S., Sigarev A.A., Toknova V.F. "Structural properties of the titanium dioxide thin films grown by atomic layer deposition at various numbers of reaction cycles". Applied Surface Science 257 (1), 2010, pp.186-191

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