9 Institutskii per.,
Dolgoprudny, Moscow region


  1. Chernikova A.G., Markeev A.M., Lebedinskii Y.Y., Kozodaev M.G., Zablotskiy A.V. "Structural, chemical and electrical properties of ALD-grown HfxAl1-xOy thin films for MIM capacitors" Physica Status Solidi (B) Basic Research Volume 252, Issue 4, 1 April 2015, Pages 701-708

  2. Egorov, K.V., Lebedinskii, Y.Y., Markeev, A.M., Orlov, O.M. "Full ALD Ta2O5-based stacks for resistive random access memory grown with in vacuo XPS monitoring" Applied Surface Science Volume 356, 30 November 2015, Pages 454-459

  3. Lebedinskii Y.Y, Chernikova A.G, Markeev A.M., Kuzmichev D.S. "Effect of dielectric stoichiometry and interface chemical state on band alignment between tantalum oxide and platinum" Applied Physics Letters Volume 107, Issue 14, 5 October 2015, Article number 142904

  4. Matveyev Y., Egorov K., Markeev A., Zenkevich A. "Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO2/TiN devices" Journal of Applied Physics Volume 117, Issue 4, 28 January 2015, Article number 044901

  5. Egorov, K.V. , Kirtaev, R.V.,  Lebedinskii, Y.Y.,  Markeev, A.M.,  Matveyev, Y.A., Orlov, O.M.,  Zablotskiy, A.V.,  Zenkevich, A.V.  "Complementary and bipolar regimes of resistive switching in TiN/HfO2/TiN stacks grown by atomic-layer deposition" Physica Status Solidi (A) Applications and Materials Science Volume 212, Issue 4, 1 April 2015, Pages 809-816

  6. Chernikova A.,  Kozodaev M.,  Markeev A.,  Matveev Y.,  Negrov D.,  Orlov O.,  "Confinement-free annealing induced ferroelectricity in Hf0.5Zr0.5O2 thin films" Microelectronic Engineering Volume 147, 1 November 2015, Pages 15-18

  7. Islamov D.R., Chernikova A.G.,  Kozodaev M.G.,  Markeev A.M.,  Perevalov T.V.,  Gritsenko V.A.,  Orlov O.M., "Charge transport mechanism in thin films of amorphous and ferroelectric Hf0.5Zr0.5O2" JETP Letters Volume 102, Issue 8, 1 October 2015, Pages 544-547

Copyright © 2015-2019

Moscow Institute of Physics and Technology
Сделано в веб-студии “ВВЕРХ.biz